Low Cost Production of InGaN for Next-Generation Photovoltaic Devices
The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.
- Research Organization:
- Structured Materials Industries, Inc., Piscataway, NJ (United States)
- Sponsoring Organization:
- USDOE; USDOE EE Office of Industrial Technologies (EE-2F)
- DOE Contract Number:
- EE0003493
- OSTI ID:
- 1046340
- Report Number(s):
- DOE/EE0003493-1; TRN: US201215%%444
- Country of Publication:
- United States
- Language:
- English
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