Diamondoid monolayers as electron emitters
Abstract
Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
- Inventors:
-
- El Cerrito, CA
- San Francisco, CA
- Menlo Park, CA
- Orinda, CA
- Stanford, CA
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1040877
- Patent Number(s):
- 8,154,185
- Application Number:
- US patent applicaiton 11/704,910
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University (Stanford, CA); The Regents of the University of California (Oakland, CA)
- DOE Contract Number:
- AC02-05CH11231; AC02-76SF00515
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Yang, Wanli, Fabbri, Jason D, Melosh, Nicholas A, Hussain, Zahid, and Shen, Zhi-Xun. Diamondoid monolayers as electron emitters. United States: N. p., 2012.
Web.
Yang, Wanli, Fabbri, Jason D, Melosh, Nicholas A, Hussain, Zahid, & Shen, Zhi-Xun. Diamondoid monolayers as electron emitters. United States.
Yang, Wanli, Fabbri, Jason D, Melosh, Nicholas A, Hussain, Zahid, and Shen, Zhi-Xun. 2012.
"Diamondoid monolayers as electron emitters". United States. https://www.osti.gov/servlets/purl/1040877.
@article{osti_1040877,
title = {Diamondoid monolayers as electron emitters},
author = {Yang, Wanli and Fabbri, Jason D and Melosh, Nicholas A and Hussain, Zahid and Shen, Zhi-Xun},
abstractNote = {Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.},
doi = {},
url = {https://www.osti.gov/biblio/1040877},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2012},
month = {Tue Apr 10 00:00:00 EDT 2012}
}
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