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Title: Multiband semiconductor compositions for photovoltaic devices

Patent ·
OSTI ID:1039887
 [1];  [2];  [3]
  1. Kensington, CA
  2. Lafayette, CA
  3. Belmont, MA
+ Show Author Affiliations

The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn.sub.1-yMn.sub.yTe host. With multiple band gaps that fall within the solar energy spectrum, Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-76SF00098
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
8,129,615
Application Number:
12/009,505
OSTI ID:
1039887
Country of Publication:
United States
Language:
English

References (12)

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Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1−x formed by N ion implantation journal May 2002
High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells
  • King, R. R.; Colter, P. C.; Joslin, D. E.
  • Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. https://doi.org/10.1109/PVSC.2002.1190713
conference January 2002
Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters: Part I: Considerations for Earth's Surface Operation journal July 1960
Third-derivative modulation spectroscopy with low-field electroreflectance journal June 1973
III–V compound multi-junction solar cells: present and future journal January 2003
Band Anticrossing in GaInNAs Alloys journal February 1999
Interaction of Localized Electronic States with the Conduction Band: Band Anticrossing in II-VI Semiconductor Ternaries journal August 2000
Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels journal June 1997
Experimental results of GaInP/sub 2//GaAs/Ge triple junction cell development for space power systems conference January 1996
Projected performance of three- and four-junction devices using GaAs and GaInP conference January 1997
Band anticrossing in group II-Ox–VI1−x highly mismatched alloys: Cd1−xMnyOxTe1−x quaternaries synthesized by O ion implantation journal March 2002

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Related Subjects

36 MATERIALS SCIENCE