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Title: Simple intrinsic defects in GaAs : numerical supplement.

Abstract

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Authors:
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1039410
Report Number(s):
SAND2012-2675
TRN: US1202195
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; DEFECTS; FUNCTIONALS; GALLIUM ARSENIDES; PHYSICS

Citation Formats

Schultz, Peter Andrew. Simple intrinsic defects in GaAs : numerical supplement.. United States: N. p., 2012. Web. doi:10.2172/1039410.
Schultz, Peter Andrew. Simple intrinsic defects in GaAs : numerical supplement.. United States. https://doi.org/10.2172/1039410
Schultz, Peter Andrew. 2012. "Simple intrinsic defects in GaAs : numerical supplement.". United States. https://doi.org/10.2172/1039410. https://www.osti.gov/servlets/purl/1039410.
@article{osti_1039410,
title = {Simple intrinsic defects in GaAs : numerical supplement.},
author = {Schultz, Peter Andrew},
abstractNote = {This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.},
doi = {10.2172/1039410},
url = {https://www.osti.gov/biblio/1039410}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Apr 01 00:00:00 EDT 2012},
month = {Sun Apr 01 00:00:00 EDT 2012}
}