Preliminary Results of 3D-DDTC Pixel Detectors for the ATLAS Upgrade

Conference · Wed Apr 04 00:00:00 EDT 2012 · PoS RD09:032,2009

OSTI ID:1038021

La Rosa, Alessandro; Boscardin, M.; Dalla Betta, G. -F.; Darbo, G.; Gemme, C.; Pernegger, H.; Piemonte, C.; Povoli, M.; Ronchin, S.; Zoboli, A.; Zorzi, N.; Bolle, E.; Borri, M.; Da Via, C.; Dong, S.; Fazio, S.; Grenier, P.; Grinstein, S.; Gjersdal, H.; Hansson, P. ; Huegging, F.

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200 {mu}m, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110 {mu}m to 150 {mu}m. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3) at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am{sup 241} {gamma}-ray sources, charge collection tests with Sr90 {beta}-source and an overview of preliminary results from the CERN beam test.

• Research Organization: SLAC National Accelerator Lab., Menlo Park, CA (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 1038021
• Report Number(s): SLAC-PUB-14921; arXiv:0910.3788
• Journal Information: PoS RD09:032,2009, Conference: Presented at 9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors: RD09, Florence, Italy, 30 Sep - 2 Oct 2009
• Country of Publication: United States
• Language: English

Related Subjects

Instrumentation
PHYS