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Title: Method of doping organic semiconductors

Patent ·
OSTI ID:1036112

A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.

Research Organization:
The Trustees of Columbia University (New York, NY)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-04ER46118
Assignee:
Alcatel Lucent (Paris, FR); The Trustees of Columbia University (New York, NY)
Patent Number(s):
8,124,444
Application Number:
12/875,902
OSTI ID:
1036112
Country of Publication:
United States
Language:
English

References (7)

Mobility-independent doping in crystalline rubrene field-effect transistors journal June 2007
The Effect of Oxygen on the Photoconductivity of Anthracene. II journal June 1954
Field-effect transistors on rubrene single crystals with parylene gate insulator journal March 2003
Humidity effect on electrical performance of organic thin-film transistors journal January 2005
Light-induced switching in back-gated organic transistors with built-in conduction channel journal December 2004
Determination of the inertial contribution to the nonlinear refractive index of air, N_2, and O_2 by use of unfocused high-intensity femtosecond laser pulses journal January 1997
New Phenomena in High Mobility Organic Semiconductors journal August 2001

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