skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure

Patent ·
OSTI ID:1034909

A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A.sub.8TM.sub.y.sub.1.sup.1TM.sub.y.sub.2.sup.2 . . . TM.sub.y.sub.n.sup.nM.sub.zX.sub.46-y.sub.1.sub.-y.sub.2.sub.- . . . -y.sub.n.sub.-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM.sup.1, TM.sup.2, and TM.sup.n are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y.sub.1, y.sub.2, y.sub.n and Z are actual compositions of TM.sup.1, TM.sup.2, TM.sup.n, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8q.sub.A-|.DELTA.q.sub.1|y.sub.1-|.DELTA.q.sub.2|y.sub.2- . . . -|.DELTA.q.sub.n|y.sub.n, wherein q.sub.A is a charge state of A, and wherein .DELTA.q.sub.1, .DELTA.q.sub.2, .DELTA.q.sub.n are, respectively, the nominal charge state of the first, second, and n-th TM.

Research Organization:
GM Global Technology Operations LLC (Detroit, MI)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC26-04NT42278
Assignee:
GM Global Technology Operations LLC (Detroit, MI)
Patent Number(s):
8,097,802
Application Number:
12/434,333
OSTI ID:
1034909
Country of Publication:
United States
Language:
English

References (11)

Estimation of the thermal band gap of a semiconductor from seebeck measurements journal July 1999
Skutterudite antimonides: Quasilinear bands and unusual transport journal October 1994
Crystal Structure, Band Structure, and Physical Properties of Ba 8 Cu 6 - x Ge 40+ x (0 ≤ x ≤ 0.7) journal September 2006
Structure and Lattice Thermal Conductivity of Fractionally Filled Skutterudites: Solid Solutions of Fully Filled and Unfilled End Members journal April 1998
Structure and properties of Ba8Ga16Ge30 clathrates by a novel synthesis method using CO gas reductive atmosphere journal April 2005
Strain field fluctuation effects on lattice thermal conductivity of ZrNiSn-based thermoelectric compounds journal August 2004
Optimization of the thermoelectric properties of Ba8Ga16Ge30 journal June 2008
Effect of transition element substitution on thermoelectric properties of semiconductor clathrate compounds conference January 2003
Figure of merit for thermoelectrics journal February 1989
Crystal structure and thermoelectric properties of type-I clathrate compounds in the Ba–Ga–Ge system journal October 2006
Large thermoelectric figure of merit at high temperature in Czochralski-grown clathrate Ba8Ga16Ge30 journal January 2006

Similar Records

Solid oxide fuel cells, and air electrode and electrical interconnection materials therefor
Patent · Wed Jan 01 00:00:00 EST 1992 · OSTI ID:1034909

Tuning Thermoelectric Properties of Type I Clathrate K8–xBaxAl8+xSi38–x through Barium Substitution
Journal Article · Wed Apr 20 00:00:00 EDT 2016 · Chemistry of Materials · OSTI ID:1034909

Gallium based low-interaction anions
Patent · Sat Jan 01 00:00:00 EST 2000 · OSTI ID:1034909

Related Subjects