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Title: Silicon-based visible and near-infrared optoelectric devices

Patent ·
OSTI ID:1034168

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Research Organization:
Harvard College (Cambridge, MA)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-01GO11051
Assignee:
President and Fellows of Harvard College (Cambridge, MA)
Patent Number(s):
8,080,467
Application Number:
12/776,694
OSTI ID:
1034168
Country of Publication:
United States
Language:
English

References (19)

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Novel conical microstructures created in silicon with femtosecond laser pulses
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conference January 1998
Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiation journal April 1999
Zn(MgBe)Se ultraviolet photodetectors journal June 2001
Modeling of the spectral response of PIN photodetectors Impact of exposed zone thickness, surface recombination velocity and trap concentration journal February 2004
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Surface nanostructuring of silicon journal July 2003
Field emission from silicon microstructures formed by femtosecond laser assisted etching
  • Carey, J. E.; Zhao, L.; Wu, C.
  • CLEO 2001. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest, Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170) https://doi.org/10.1109/CLEO.2001.948159
conference January 2001
Formation of conical microstructures upon laser evaporation of solids journal August 2001
Microstructuring of silicon with femtosecond laser pulses journal September 1998
Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses journal March 2003
Femtosecond-Laser-Assisted Microstructuring of Silicon Surfaces journal January 2003
Whiskerlike structure growth on silicon exposed to ArF excimer laser irradiation journal July 1996

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