Electron and optical beam testing of integrated circuits using CIVA, LIVA, and LECIVA
Charge-Induced Voltage Alteration (CIVA), Light-Induced Voltage Alteration, (LIVA), and Low Energy CIVA (LECIVA) are three new failure analysis imaging techniques developed to quickly localize defects on ICs. All three techniques utilize the voltage fluctuations of a constant current power supply as an electron or photon beam is scanned across an IC. CIVA and LECIVA yield rapid localization of open interconnections on ICs. LIVA allows quick localization of open-circuited and damaged semiconductor junctions. LIVA can also be used to image transistor logic states and can be performed from the backside of ICs with an infrared laser source. The physics of signal generation for each technique and examples of their use in failure analysis are described.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 102394
- Report Number(s):
- SAND-95-1946C; CONF-9508159-1; ON: DE95017570; TRN: 95:006800
- Resource Relation:
- Conference: 5. European conference on electron and optical beam testing of electronic devices, Wuppertal (Germany), 27-30 Aug 1995; Other Information: PBD: 1995
- Country of Publication:
- United States
- Language:
- English
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