Enhancing the Electron Mobility via Delta-Doping in SrTiO3

Journal Article · Thu Aug 11 00:00:00 EDT 2011 · Applied Physics Letters 97, 222115:1-3 (2010)

OSTI ID:1023772

Kozuka, Y

We fabricated high-mobility {delta}-doped structures in SrTiO{sub 3} thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobility above the bulk value was observed as the doped layer thickness decreased. High-field Hall measurements revealed that this mobility enhancement originates from higher-mobility electrons in the undoped clean regions, which have quantum-mechanically broadened from the doped layer. Because of the absence of apparent lattice misfit between the layers, this structure is highly suitable for investigating two-dimensional electron gases in SrTiO{sub 3}

• Research Organization: SLAC National Accelerator Lab., Menlo Park, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-76SF00515
• OSTI ID: 1023772
• Report Number(s): SLAC-PUB-14512; APPLAB; TRN: US201120%%1091
• Journal Information: Applied Physics Letters 97, 222115:1-3 (2010), Vol. 97, Issue 1-3; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIERS
DOPED MATERIALS
ELECTRON MOBILITY
ELECTRON GAS
ELECTRON TRANSFER
HALL EFFECT
LAYERS
STRONTIUM TITANATES
TEMPERATURE RANGE 0065-0273 K
THICKNESS
THIN FILMS
PHYS