Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts

Conference · Tue Aug 01 00:00:00 EDT 1995

OSTI ID:102339

Sopori, B L; Luque, A; Sopori, B; Swanson, D; Gee, J; Kalejs, J; Jastrzebski, L; Tan, T

This workshop dealt with engineering aspects and material properties of silicon electronic devices. Crystalline silicon growth, modeling, and properties are discussed in general and as applied to solar cells. Topics considered in discussions of silicon growth include: casting, string ribbons, Al backside contacts, ion implantation, gettering, passivation, and ultrasound treatments. Properties studies include: Electronic properties of defects and impurities, dopant and carrier concentrations, structure and bonding, nitrogen effects, degradation of bulk diffusion length, and recombination parameters. Individual papers from the workshop are indexed separately on the Energy Data Bases.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 102339
• Report Number(s): NREL/SP-413-8250; CONF-9508143-Extd.Absts.; ON: DE95009278
• Resource Relation: Conference: 5. workshop on the role of impurities and defects in silicon device processing, Copper Mountain, CO (United States), 13-16 Aug 1995; Other Information: PBD: Aug 1995
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SILICON
MEETINGS
LEADING ABSTRACT
SILICON SOLAR CELLS
GETTERING
IMPURITIES
CRYSTAL DEFECTS
SEMICONDUCTOR DEVICES
CRYSTAL GROWTH
DIELECTRIC PROPERTIES