Utilization of amorphous silicon carbide (a-Si:C:H) as a resistive layer in gas microstrip detectors
Thin semiconducting films of hydrogenated amorphous silicon (a-Si:H) and its carbon alloy (a-Si:C:H) were applied to gas microstrip detectors in order to control gain instabilities due to charges on the substrate. Thin ({approximately}100nm) layers of a-Si:H or p-doped a-Si:C:H were placed either over or under the electrodes using the plasma enhanced chemical vapor deposition (PECVD) technique to provide the substrate with a suitable surface conductivity. By changing the carbon content and boron doping density, the sheet resistance of the a-Si:C:H coating could be successfully controlled in the range of 10{sup 12} {approximately} 10{sup 17} {Omega}/{four_gradient}, and the light sensitivity, which causes the resistivity to vary with ambient light conditions, was minimized. An avalanche gain of 5000 and energy resolution of 20% FWHM were achieved and the gain remained constant over a week of operation. A-Si:C:H film is an attractive alternative to ion-implanted or semiconducting glass due to the wide range of resistivities possible and the feasibility of making deposits over a large area at low cost.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 102320
- Report Number(s):
- LBL-37084; CONF-950412-31; ON: DE95014873; TRN: 95:020292
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995; Other Information: PBD: Apr 1995
- Country of Publication:
- United States
- Language:
- English
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