High gain GaAs Photoconductive Semiconductor Switches (PCSS): Device lifetime, high current testing, optical pulse generators
This paper presents results from three areas of GaAs PCSS research and development: device lifetime, high current switching, and PCSS-driven laser diode arrays (LDA). The authors have performed device lifetime tests on both lateral and vertical switches as a function of current amplitude, pulse width, and charging time. At present, their longest-lived switch reached 4 {times} 10{sup 6} pulses. Scanning electron microscope (SEM) images show damage near the contacts even after only 5 pulses. They are presently searching for the threshold at which no damage is evident after a single shot. In high current tests, they have reached 5.2 kA at 4.2 kV. This was achieved using twenty fiber-optic coupled lasers to distribute current filaments over a 5 mm wide PCSS. Current waveforms and images of the current filaments as a function of current amplitude will be presented. The lasers used to trigger the high current PCSS were driven with a miniature PCSS. Low inductance, high speed GaAs PCSS are very effective as short pulse laser diode array drivers. Some types of arrays gain switch, producing a compressed optical pulse which is only 75 ps wide. Results from tests with a variety of laser diode arrays will be presented.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10197007
- Report Number(s):
- SAND-94-1186C; CONF-941006-3; ON: DE95003354; TRN: 95:000113
- Resource Relation:
- Conference: SPIE annual conference of the Optical Society of America and exhibit,Boston, MA (United States),30 Oct - 4 Nov 1994; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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