Annealing of nitrogen-doped ZnSe at high pressures: Toward suppression of native defect formation

Conference · Fri Jul 01 00:00:00 EDT 1994

OSTI ID:10196822

Chen, A L; Walukiewicz, W ^[1]; Haller, E E ^[1]; Luo, H; Karczewski, G; Furdyna, J ^[2]

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1. Lawrence Berkeley Lab., CA (United States)
2. University of Notre Dame, Notre Dame, IN (United States). Dept. of Physics

Pressure is shown to have a drastic effect an the annealing characteristics of p-type, nitrogen-doped ZnSe. Samples annealed in vacuum show decreased carrier concentrations and simultaneous formation of deep-donor-related luminescence, while samples annealed under pressure show suppression of this compensating donor. Results are interpreted as an increase in the formation energy of the compensating deep donor under pressure. In addition the samples annealed under pressure show emergence of a new, intense, green luminescence band centered at 2.44 eV. The magnitude of the shift of this Peak under applied stress suggests that it results from a recombination involving a deep acceptor.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 10196822
• Report Number(s): LBL-35434; CONF-940981-4; ON: DE95003420
• Resource Relation: Conference: 21. international symposium on compound semiconductors,San Diego, CA (United States),18-22 Sep 1994; Other Information: PBD: Jul 1994
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ZINC SELENIDES
ANNEALING
ELECTRICAL PROPERTIES
DOPED MATERIALS
PHOTOLUMINESCENCE
VERY HIGH PRESSURE
360606
426000
PHYSICAL PROPERTIES
COMPONENTS
ELECTRON DEVICES AND CIRCUITS