The structural, chemical, and electrical properties of He-implantation-induced nanocavities in silicon
Si implanted with He to doses of about 2 {times} 10{sup 16}cm{sup {minus}2} and greater and annealed at high temperatures develops a layer of internal nanocavities near the end of the He range. Above an annealing temperature of 700 C, all the implanted He escapes from these implanted samples, and the resultant internal cavity surfaces can be shown to possess a high density of chemically reactive Si dangling orbitals. These structures, in addition to possessing a variety of interesting electronic properties, have recently been shown to hold great promise as getters for removing undesirable impurities from the silicon matrix. Here the authors describe some of the structural features of these nanocavities and studies which have been used to accurately determine the binding energy of H and Cu to Si atoms at the cavity walls. Recently, they have also demonstrated that these nanocavities capture large densities of majority carriers in n- and p-type silicon. These electrical measurements have demonstrated that the nanocavity electronic states possess both acceptor and donor levels in the Si forbidden gap. The approximate location of these levels has been determined by a variety of different types of capacitance transient spectroscopy.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10194006
- Report Number(s):
- SAND-93-1725C; CONF-9308191-1; ON: DE94002681; BR: GB0103012; TRN: 94:000763
- Resource Relation:
- Conference: 3. workshop on the role of point defects/defect complexes in silicon device fabrication,Vail, CO (United States),16-18 Aug 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SILICON
ION IMPLANTATION
HELIUM IONS
ANNEALING
VOIDS
IMPURITIES
BINDING ENERGY
HYDROGEN
COPPER
ELECTRICAL PROPERTIES
CHEMICAL PROPERTIES
SPECTROSCOPY
EXPERIMENTAL DATA
GETTERING
360605
665300
RADIATION EFFECTS
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER