Simple method to estimate MOS oxide-trap, interface-trap, and border-trap densities

Conference · Wed Sep 01 00:00:00 EDT 1993

OSTI ID:10193834

Fleetwood, D M; Shaneyfelt, M R; Schwank, J R

Recent work has shown that near-interfacial oxide traps that communicates with the underlaying Si (``border traps``) can play a significant role in determining MOS radiation response and long-term reliability. Thermally-stimulated-current 1/f noise, and frequency-dependent charge-pumping measurements have been used to estimate border-trap densities in MOS structures. These methods all require high-precision, low-noise measurements that are often difficult to perform and interpret. In this summary, we describe a new dual-transistor method to separate bulk-oxide-trap, interface-trap, and border-trap densities in irradiated MOS transistors that requires only standard threshold-voltage and high-frequency charge-pumping measurements.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10193834
• Report Number(s): SAND-93-1927C; CONF-931226-1; ON: DE93041138
• Resource Relation: Conference: Institute of Electrical and Electronics Engineers (IEEE) semiconductor interface specialists conference,Ft. Lauderdale, FL (United States),9-11 Dec 1993; Other Information: PBD: [1993]
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
TRAPS
DENSITY
SILICON
RELIABILITY
665000
440200
426000
PHYSICS OF CONDENSED MATTER
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
COMPONENTS
ELECTRON DEVICES AND CIRCUITS