Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors

Technical Report · Mon Nov 01 00:00:00 EST 1993

DOI:https://doi.org/10.2172/10193797· OSTI ID:10193797

Ziock, H J; Holzscheiter, K; Morgan, A; Palounek, A P.T. ^[1]; Ellison, J; Heinson, A P; Mason, M; Wimpenny, S J ^[2]; Barberis, E; Cartiglia, N; Grillo, A; O`Shaughnessy, K; Rahn, J; Rinaldi, P; Rowe, W A; Sadrozinski, H F.W.; Seiden, A; Spencer, E; Webster, A; Wichmann, R ; Wilder, M ^[3]; Frautschi, M A; Matthews, J A.J.; McDonald, D; Skinner, D ^[4]; Coupal, D; Pal, T ^[5]

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1. Los Alamos National Lab., NM (United States)
2. Univ. of California, Riverside, CA (United States)
3. Univ. of California, Santa Cruz, CA (United States). Santa Cruz Inst. for Particle Physics
4. Univ. of New Mexico, Albuquerque, NM (United States)
5. Superconducting Super Collider Lab., Dallas, TX (United States)

The silicon microstrip detectors that will be used in the SDC experiment at the Superconducting Super Collider (SSC) will be exposed to very large fluences of charged particles, neutrons, and gammas. The authors present a study of how temperature affects the change in the depletion voltage of silicon PIN detectors damaged by radiation. They study the initial radiation damage and the short-term and long-term annealing of that damage as a function of temperature in the range from {minus}10{degrees}C to +50{degrees}C, and as a function of 800 MeV proton fluence up to 1.5 {times} 10{sup 14} p/cm{sup 2}. They express the pronounced temperature dependencies in a simple model in terms of two annealing time constants which depend exponentially on the temperature.

• Research Organization: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 10193797
• Report Number(s): LA-UR-93-3811; CONF-931107-8; ON: DE94002705; TRN: 94:000131
• Resource Relation: Conference: 1993 IEEE nuclear science symposium and medical imaging conference,San Francisco, CA (United States),2-5 Nov 1993; Other Information: PBD: [1993]
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
43 PARTICLE ACCELERATORS
SUPERCONDUCTING SUPER COLLIDER
SI SEMICONDUCTOR DETECTORS
PHYSICAL RADIATION EFFECTS
TEMPERATURE DEPENDENCE
ELECTRIC POTENTIAL
ANNEALING
PROTONS
EXPERIMENTAL DATA
MATHEMATICAL MODELS
440200
430303
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
EXPERIMENTAL FACILITIES AND EQUIPMENT