The mechanical properties of single crystal {alpha}-Si{sub 3}N{sub 4}
Conference
·
OSTI ID:10193612
The ambient and high temperature mechanical properties of single crystal {alpha}{minus}Si{sub 3}N{sub 4} synthesized by chemical vapor deposition are reported. Crack patterns in the as-grown crystals and around Vicker`s indentations reveal that significant residual stresses develop during growth. Indentation studies indicate that the cleavage is essentially isotropic in {alpha}{minus}Si{sub 3}N{sub 4} at 25 C as well as at 1400 C. Transmission electron microscopy on crystals deformed at high temperatures, confirmed previous observation that high-temperature slip occurs primarily on (1011)[1120] system.
- Research Organization:
- Los Alamos National Lab., NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 10193612
- Report Number(s):
- LA-UR-93-3531; CONF-931142-3; ON: DE94002632
- Resource Relation:
- Conference: 1. meeting of the Pacific Rim ceramic societies,Honolulu, HI (United States),7-10 Nov 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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