Ultrafast optical studies of surface reaction processes at semiconductor interfaces. Progress report
The DOE funded research has focused on the development of novel non-linear optical methods for the in situ study of surface reaction dynamics. In particular, the work has concentrated on interfacial charge transfer processes as this is the simplest of all surface reactions, i.e., no bonds are broken and the reaction is derived from nuclear repolarization. Interfacial charge transfer forms the basis for a number of important solar energy conversion strategies. In these studies, semiconductor liquid junctions provide a convenient system in which the interfacial charge transfer can be optically initiated. The all-optical approach necessitates that the dynamics of the charge transfer event itself be put in the proper context of the operating photophysical processes at the surface. There are at least four dynamical processes that are coupled in determining the overall rate of electron flux across the interface. In the limit that interfacial charge transfer approaches strong coupling, the time scale for transport of even field accelerated carriers within the space charge region becomes comparable to the charge transfer dynamics. The transport component needs to be convolved to probes of the carrier population at the surface. The other two dynamical processes, carrier thermalization and surface state trapping, determine the states which ultimately serve as the donor levels to the solution acceptor distribution. In terms of the hot carrier model, these latter two processes compete with direct unthermalized charge transfer. There is a fifth dynamical process which also needs consideration: the solvent modes that are coupled to the reaction coordinate. Ultimately, the dynamics of solvent relaxation determine the upper limit to the charge transfer process. Different optical techniques have been developed to follow all the above dynamical processes in which a real time view of charge transfer dynamics at semiconductor surfaces is emerging. These results are discussed here.
- Research Organization:
- Rochester Univ., NY (United States). Dept. of Chemistry
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-91ER14185
- OSTI ID:
- 10191250
- Report Number(s):
- DOE/ER/14185-T1; ON: DE95001548; BR: KC0301010; TRN: AHC29427%%70
- Resource Relation:
- Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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Ultrafast optical studies of surface reaction processes at semiconductor interfaces. Progress report, June 1, 1992--May 31, 1993
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