Magnetron sputtered boron films and Ti/B multilayer structures
Patent Application
·
OSTI ID:10190078
A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Dept. of Energy
- Patent Number(s):
- PATENTS-US-A7666971
- Application Number:
- ON: DE93002022
- OSTI ID:
- 10190078
- Resource Relation:
- Other Information: PBD: 11 Mar 1991
- Country of Publication:
- United States
- Language:
- English
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