Advanced far infrared detectors
Recent advances in photoconductive and bolometric semiconductor detectors for wavelength 1 mm > {lambda} > 50 {mu}m are reviewed. Progress in detector performance in this photon energy range has been stimulated by new and stringent requirements for ground based, high altitude and space-borne telescopes for astronomical and astrophysical observations. The paper consists of chapters dealing with the various types of detectors: Be and Ga doped Ge photoconductors, stressed Ge:Ga devices and neutron transmutation doped Ge thermistors. Advances in the understanding of basic detector physics and the introduction of modern semiconductor device technology have led to predictable and reliable fabrication techniques. Integration of detectors into functional arrays has become feasible and is vigorously pursued by groups worldwide.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10185471
- Report Number(s):
- LBL-33575; CONF-9306235-1; ON: DE93040289; CNN: Contract W14606; W16404; W16164; W17605; TRN: 93:021744
- Resource Relation:
- Conference: Conference on infrared physics,Ascona (Switzerland),21-26 Jun 1993; Other Information: PBD: May 1993
- Country of Publication:
- United States
- Language:
- English
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