Implantation of carbon in GaAs and compensating native defects
Conference
·
OSTI ID:10185185
The effects of co-implantation on the electrical activity of C acceptors have been studied using a series of elements as co-implants. A variety of electrical and structural techniques were used for characterization. It is found that although co-implantation with heavy ions improves the substitutionally of C atoms on As sites, a high electrical activity of the C{sub As} acceptors is attained only if the stoichiometry is maintained through co-implantation of group III atoms.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Intel Foundation (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10185185
- Report Number(s):
- LBL-34278; CONF-9307124-2; ON: DE93040122
- Resource Relation:
- Conference: 17. international conference on defects in semiconductors,Gmunden (Austria),18-23 Jul 1993; Other Information: PBD: Jul 1993
- Country of Publication:
- United States
- Language:
- English
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