Gate oxide shorts in nMOS transistors: Electrical properties and lifetime prediction method

Conference · Thu Sep 01 00:00:00 EDT 1994

OSTI ID:10183078

Dababneh, S A; Hawkins, C F ^[1]; Soden, J M ^[2]

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1. Univ. of New Mexico, Albuquerque, NM (United States). Electrical and Computer Engineering Dept.
2. Sandia National Labs., Albuquerque, NM (United States)

Degradation in nMOS transistors from gate oxide shorts is dependent upon oxide trapping and interface state generation. Three distinct damage mechanisms were identified, including generation of: (1) electron traps in the bulk oxide by the injected holes, N{sub ox,h}, (2) electron traps in the bulk oxide by the injected electrons, N{sub ox,e}, and (3) interface states, N{sub ss}. The three damage mechanisms are incorporated into a device lifetime prediction method.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10183078
• Report Number(s): SAND-94-2008C; CONF-9410199-1; ON: DE94018904; TRN: 94:008793
• Resource Relation: Conference: 5. European symposium on reliability of electron devices, failure physics and analysis (ESREF),Glasgow (United Kingdom),4-7 Oct 1994; Other Information: PBD: [1994]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
MOS TRANSISTORS
ELECTRICAL PROPERTIES
SERVICE LIFE
MOSFET
FAILURES
DEFECTS
426000
360604
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
CORROSION, EROSION, AND DEGRADATION