Raman spectroscopy of C-irradiated graphite
Highly oriented pyrolytic graphite samples were irradiated with C{sup +} ions at 35 keV in a direction normal to the basal plane and subsequently annealed up to 1373 K. Substantial surface topography changes were observed at fluences of 5 {times} 10{sup 18} ions/m{sup 2} and higher using scanning electron and atomic force microscopies. Intricate networks of surface cracks and ridges developed after high dose implantation. A systematic study of the irradiation effects was conducted using Raman spectroscopy. Microstructural changes in irradiated regions were first detected at a dose of 1 {times} 10{sup 17} ions/m{sup 2} through the appearance of the Raman D-line at {approx}1360 cm{sup {minus}1}. The intensity of this line increases while that of the Raman G-line at 1580 cm{sup {minus}1} decreases as the irradiation dose is increased or the irradiation temperature is decreased. After irradiation at 280K to a fluence of 5 {times} 10{sup 19} ions/m{sup 2} or higher the first order spectrum exhibits one single line at a wavelength intermediate between the D- and G-lines. Damage recovery upon thermal annealing depends not only on the initial damage state but also on the annealing temperature sequence. Samples irradiated to a damage level where two distinct Raman peaks are no longer resolvable exhibited upon direct annealing at a high temperature two distinct Raman lines. By contrast, pre-annealing these highly irradiated specimens at lower temperatures produced less pronounced changes in the Raman spectra. Pre-annealing appears to stabilize damage structures that are more resistant to high-temperature annealing than those induced by irradiation.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 10182658
- Report Number(s):
- CONF-921101-143; ON: DE94018705; TRN: 94:008398
- Resource Relation:
- Conference: 16. Materials Research Society (MRS) fall meeting,Boston, MA (United States),30 Nov - 5 Dec 1992; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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