Advanced Processing Technology for High-Efficiency, Thin-Film CuInSe2 Solar Cells, Annual Subcontract Report, 1 March 1992 - 28 February 1993
This report describes work to develop novel fabrication for CuInSe{sub 2} (CIS) solar cells that will result in improved performance and cost effectiveness at the manufacturing level. The primary approach involves all solid-state processing for CIS. This was augmented by work to provide novel alternatives for the formation of the window layer/heterojunction contact. Inherent to the project was the need to develop a generic understanding of the relationship between processing and performance so that broad-based transfer to industry can be facilitated. We achieved good-electronic-quality CIS by the use of two selenization procedures for predeposited metal layers. We achieved good stoichiometry throughout the bulk of the film, attained grain sizes of up to 1 {mu}m, and measured electron mobilities of up to 60 cm{sup 2}V-s. However, there is a complex relationship between grain size, adhesion, and performance. Our primary approach to characterization was to fabricate ZnO/CIS test devices and measure as many properties as possible in device format. We are also developing reactive sputtering of ZnO as an alternative window layer technology.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 10182483
- Report Number(s):
- NREL/TP-451-5653; ON: DE93010045
- Resource Relation:
- Other Information: PBD: Aug 1993
- Country of Publication:
- United States
- Language:
- English
Similar Records
Polycrystalline Thin Film Materials and Devices, Annual Subcontract Report, 16 January 1990 - 15 January 1991
Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991