Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

Mazur, Eric; Shen, Mengyan

Title: Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

Patent · Tue Feb 08 00:00:00 EST 2011

OSTI ID:1018043

Mazur, Eric ^[1]; Shen, Mengyan ^[2]

Concord, MA
Belmont, MA

The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

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Research Organization:: INTL UTILITY EFFICIENCY PARTN

Sponsoring Organization:: USDOE

DOE Contract Number:: FG36-01GO11053

Assignee:: President & Fellows of Harvard College (Cambridge, MA)

Patent Number(s):: 7,884,446

Application Number:: 12/235,086

OSTI ID:: 1018043

Country of Publication:: United States

Language:: English

References (18)

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