Characterization of an expanded-field Schwarzschild objective for extreme ultraviolet lithography
- and others
The performance of a new 10x-reduction Schwarzschild system for projection imaging at 13.4 nm wavelength is reported. The optical design is optimized to achieve 0.1 {mu}m resolution over a 0.4 mm image field of view, an increase in area of a factor of 100 over previous designs. An off-set aperture, located on the convex primary, defines an unobscured 0.08 numerical aperture. The system is illuminated using extreme ultraviolet (EUV) radiation emitted from a laser plasma source and collected by an ellipsoidal condenser. A 450 turning mirror is used to relay the collected EUV radiation onto a near-normal reflecting mask. Multiple sets of primary and secondary elements were fabricated, matched and clocked to minimize the effects of small figure errors on imaging performance. Optical metrology indicates that the wave-front error within the subaperture used is within a factor of two of the design value. Images recorded in PMMA and ZEP 520 resists reveal good imaging fidelity over much of the 0.4 mm field with equal line/space gratings being resolved to 0.1 {mu}m.
- Research Organization:
- Sandia National Labs., Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10174212
- Report Number(s):
- SAND-94-8619C; CONF-9406231-1; ON: DE94016780; BR: GB0103012
- Resource Relation:
- Conference: Electron ion and photon beams symposium,New Orleans, LA (United States),Jun 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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