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Title: Measurements of crystal growth kinetics at extreme deviations from equilibrium. Technical progress report, 1 September 1990--31 August 1991

Technical Report ·
DOI:https://doi.org/10.2172/10171714· OSTI ID:10171714

We have measured solute trapping of several solutes in Al and Ni during rapid solidification. We have also made preliminary measurements of solute trapping of As in Si, trapped 20 atomic percent As in Si, and made a preliminary measurement of the T{sub o} curve in Si-As. 5 figs.

Research Organization:
Harvard Univ., Cambridge, MA (United States). Div. of Applied Sciences
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
FG02-89ER45401
OSTI ID:
10171714
Report Number(s):
DOE/ER/45401-3; ON: DE92019744
Resource Relation:
Other Information: PBD: 14 Jul 1992
Country of Publication:
United States
Language:
English