Characteristics of oxynitrides grown in N{sub 2}O
Conference
·
OSTI ID:10170092
- Naval Research Lab., Washington, DC (United States)
- Sandia National Labs., Albuquerque, NM (United States)
MOS oxides have been fabricated by oxidation of silicon in N{sub 2}O. Processes studied include oxidation in N{sub 2}O alone, and two-step oxidation in O{sub 2} followed by N{sub 2}O. For both oxides, a nitrogen-rich layer with a peak N concentration of {approximately} 0.5 at. % is observed at the Si-SiO{sub 2} interface with SIMS. Electrical characteristics of N{sub 2}O oxides, such as breakdown and defect generation, are generally improved, especially for the two-step process. Drawbacks typically associated with NH{sub 3}-nitrided oxides such as high fixed oxide charge and enhanced electron trapping, are not observed in N{sub 2}O oxides, which is probably due to their smaller nitrogen content.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10170092
- Report Number(s):
- SAND-94-1742C; CONF-940529-22; ON: DE94015798; BR: GB0103012
- Resource Relation:
- Conference: 185. Electrochemical Society meeting,San Francisco, CA (United States),22-27 May 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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