Defects in GaAs bulk crystals and multi-layers caused by In diffusion
- Max-Planck-Institut of Microstructure Physics, Halle/Saale (Germany)
- Lawrence Berkeley Lab., CA (United States)
- University of Warsaw, Warsaw (Poland) Physics Dept.
The objective was to study by transmission electron microscopy the lattice defects in GaAs bulk crystals and heterostructures formed by In diffusion. In such samples hints for the existence of superconductivity have been found. Indium was found to move more than 100 {mu}m into bulk GaAs during lh annealing at 550C (such conditions are typical for molecular beam epitaxy growth on GaAs wafers). This rapid diffusion is accompanied by the creation of dislocation networks and metallic In droplets that show evidence for lattice strain. To study the interaction of In with the GaAs lattice, In/GaAs multi-layers were grown by MBE at about 450C on a GaAs buffer layer. The interfaces of these structures showed misfit dislocations at islands of InAs besides the presence of lattice strain. Both types of samples showed microwave absorption signals typical for superconductivity. The most likely superconductive phases are small metastable inclusions, probably consisting amorphous Ga or In.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10169835
- Report Number(s):
- LBL-34143; CONF-930405-29; ON: DE93016968
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society,San Francisco, CA (United States),12-16 Apr 1993; Other Information: PBD: Apr 1993
- Country of Publication:
- United States
- Language:
- English
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