Magnetic field dependent photoluminescence studies of InGaAs/GaAs strained-single-quantum wells
Conference
·
OSTI ID:10169534
- Sandia National Labs., Albuquerque, NM (United States)
- Massachusetts Inst. of Tech., Cambridge, MA (United States). Francis Bitter National Magnet Lab.
Magnetoluminescence determined conduction-band and valence-band dispersion curves are presented for n-type InGaAs/GaAs stained-single-quantum well structures. The magnetic field range was 0 to 30 tesla, and the temperature varied between 4.2 and 77.4 K.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10169534
- Report Number(s):
- SAND-94-1888C; CONF-940847-2; ON: DE94015774; BR: GB0103012; CNN: Grant DMR-9201614
- Resource Relation:
- Conference: Conference on the application of high magnetic fields,Cambridge, MA (United States),8-12 Aug 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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