Structure and property of heteroepitaxial TiO{sub 2}/VO{sub 2} multilayers
Conference
·
OSTI ID:10167572
Various types of TiO{sub 2}/VO{sub 2} multilayer structures have been prepared on sapphire substrates by a low-pressure metal-organic chemical vapor deposition process. X-ray diffraction and transmission electron microscopy techniques were used to study the crystallinity and epitaxial relationships of the deposited films. High resolution electron microscopy was used to examine the microstructure of the overlayers and interfaces. Electrical resistivity measurements were performed to investigate the metal-semiconductor phase transition of VO{sub 2} layers in multilayer structures.
- Research Organization:
- Argonne National Lab., IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 10167572
- Report Number(s):
- ANL/CP-75751; CONF-9206221-1; ON: DE92018181
- Resource Relation:
- Conference: ICSFS-6: 6th international conference on solid films and surfaces,Paris (France),29 Jun - 3 Jul 1992; Other Information: PBD: Jun 1992
- Country of Publication:
- United States
- Language:
- English
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