Evaluation of the improvement in the figure of merit of Bi{sub 2}Te{sub 3} - based alloys with addition of ultrafine scattering centers
- California Institute of Technology, Pasadena, CA (United States). Jet Propulsion Lab.
The addition of ultrafine scattering centers into Bi{sub 2}Te{sub 3}-based materials and their impact on the thermal and electrical transport properties in a 200-500 K temperature range are discussed. Based on previous theoretical efforts, the resulting improvements in the figure of merit of these heavily doped thermoelectric semiconductors were calculated as a function of composition, temperature, doping level, particulate size and concentration. Determination of the lattice thermal conductivity of the various alloys was conducted by considering phonon-phonon, carrier-phonon, point defect and inert scattering center scattering mechanisms. Degradation of the electrical properties due to the increase scattering rate was also taken into account. Practical application of these results is considered.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 10166870
- Report Number(s):
- KAPL-4767; ON: DE94015363; TRN: 94:007457
- Resource Relation:
- Other Information: PBD: Sep 1993
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BISMUTH TELLURIDES
THERMAL CONDUCTIVITY
ELECTRIC CONDUCTIVITY
ALLOYS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
CRYSTAL DOPING
SEMICONDUCTOR MATERIALS
THERMOELECTRIC MATERIALS
PARTICLES
PHONONS
360606
PHYSICAL PROPERTIES