Fabrication of large area Si cylindric drift detectors
- Brookhaven National Lab., Upton, NY (United States)
- Heidelberg Univ. (Germany). Dept. of Physics
Advanced Si drift detector, a large area cylindrical drift detector (CDD), processing steps, with the exception of the ion implantation, were carried out in the BNL class 100 cleanroom. The double-side planer process technique was developed for the fabrication of CDD. Important improvements of the double-side planer process in this fabrication are the introduction of Al implantation protection mask and the remaining of a 1000 Angstroms oxide layer in the p-window during the implantation. Another important design of the CDD is the structure called ``river,`` which ,allows the current generated on Si-SiO{sub 2} interface to ``flow`` into the guard anode, and thus can minimize the leakage current at the signed anode. The test result showed that most of the signal anodes have the leakage current about 0.3 nA/cm{sup 2} for the best detector.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10166849
- Report Number(s):
- BNL-49016; CONF-931107-1; ON: DE93016132
- Resource Relation:
- Conference: 1993 IEEE nuclear science symposium and medical imaging conference,San Francisco, CA (United States),2-5 Nov 1993; Other Information: PBD: Apr 1993
- Country of Publication:
- United States
- Language:
- English
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