Studies of deep levels in high resistivity silicon detectors irradiated by high fluence fast neutrons using a thermally stimulated current spectrometer
- Brookhaven National Lab., Upton, NY (United States)
- Istituto Nazionale di Fisica Nucleare, Firenza (Italy)
Measurements of deep level spectrum of high resistivity silicon detectors irradiated by high fluence fast neutrons ({Phi}{sub n}: 2 {times} 10{sup 12}n/cm{sup 2}) have been made using a thermally stimulated current (TSC) spectrometer. It has been found that at least nine new defect levels, with peaking temperature of 19K, 27K, 36K, 44K, 49K, 83K, 93K, 105K, and 120K, begin to appear when {Phi}{sub n} {ge} 1 {times} 10{sup 13}n/cm. All peaks have strong dependences on the filling voltage (V{sub fill}, forward bias) or injection current especially for high fluence ({Phi}{sub n} {ge} 10{sup 13} n/cm{sup 2}) situations. The defect concentration, energy level in the band gap, and cross section of each deep level, totaling, at least 13, have been studied systematically and possible identifications of the levels have been discussed.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10165788
- Report Number(s):
- BNL-49017; CONF-931107-2; ON: DE93016133; TRN: 93:018824
- Resource Relation:
- Conference: 1993 IEEE nuclear science symposium and medical imaging conference,San Francisco, CA (United States),2-5 Nov 1993; Other Information: PBD: Apr 1993
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
SILICON
CRYSTAL DEFECTS
SI SEMICONDUCTOR DETECTORS
PHYSICAL RADIATION EFFECTS
SOLID STATE PHYSICS
DAMAGING NEUTRON FLUENCE
FAST NEUTRONS
440200
440103
360605
360602
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
NUCLEAR SPECTROSCOPIC INSTRUMENTATION
RADIATION EFFECTS
STRUCTURE AND PHASE STUDIES