Influence of electrode geometry on the high-field characteristics of photoconductive silicon wafers
- South Carolina Univ., Columbia, SC (United States). Dept. of Electrical and Computer Engineering
- Sandia National Labs., Albuquerque, NM (United States)
- Ktech Corp., Albuquerque, NM (United States)
A series of experiment were conducted to study the influence of electrode geometry on the prebreakdown (and breakdown) characteristics of high resistivity ({rho} > 30 k{Omega}-cm), p-type Si wafers under quasi-uniform and non-uniform electric field configurations. In the quasi-uniform field configuration, the 1mm thick Si wafer was mounted between the slots of two plane parallel stainless steel disc electrodes (parallel), while the non-uniform field was obtained by mounting the wafer between two pillar-type electrodes with a hemispherical tip (pillar). The main objective of the above investigation was to verify if the uniform field configuration under a parallel system has a positive influence by reducing the field enhancement at the contact region, as opposed to the definite field enhancement present in the case of the non-uniform pillar system. Also, it was proposed to study the effect of the contact profile on the field distribution over the wafer surface and hence its influence on the high-field performance of the Si wafers.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10163562
- Report Number(s):
- SAND-94-1227C; CONF-940678-2; ON: DE94014660; BR: GB0103012
- Resource Relation:
- Conference: 21. international power modulator symposium,Costa Mesa, CA (United States),28-30 Jun 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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