Silicon nitride and oxynitride film formation using electron cyclotron resonance plasmas

Conference · Fri Jul 01 00:00:00 EDT 1994

OSTI ID:10162569

Barbour, J C

Growth of dielectrics from electron cyclotron resonance (ECR) plasmas can provide for low-temperature surface passivation and gate-quality insulation. Properties of SiN{sub x} and SiN{sub x}O{sub y} were measured on three model substrates: Si, GaAs, and InSb. The hydrogen incorporated into as-grown SiN{sub x} was primarily bonded to nitrogen and the total H content decreased with increasing deposition temperature (100--600 C). A model for the thermal release of H from Si-H bonds and two types of N-H bonds described the energetics of the H stability. A thermally-grown SiO{sub 2} layer improved the interface between ECR-deposited SiN{sub x} and Si, yielding an interface-state density of 1.5 {times} 10{sup 11} cm{sup {minus}2} eV{sup {minus}1} (midgap). The thermal release of H from SiN{sub x} on GaAs passivated non-radiative recombination centers. The difference in adhesion of Si{sub 3}N{sub 4} on InSb and the adhesion of Si{sub 3}ON{sub 2} on InSb was described in terms of the strength of the bonding at the dielectric-InSb interface, and the room-temperature growth of a high-quality dielectric on InSb was demonstrated.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10162569
• Report Number(s): SAND-93-4061C; CONF-940529-17; ON: DE94014259; BR: GB0103012
• Resource Relation: Conference: 185. Electrochemical Society meeting,San Francisco, CA (United States),22-27 May 1994; Other Information: PBD: [1994]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
SILICON NITRIDES
ELECTRICAL PROPERTIES
DEPOSITION
FILMS
SILICON OXIDES
CAPACITANCE
HYDROGEN
SUBSTRATES
ADHESION
SILICON
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
MIS TRANSISTORS
360201
360204
426000
PREPARATION AND FABRICATION
PHYSICAL PROPERTIES
COMPONENTS
ELECTRON DEVICES AND CIRCUITS