Microcontamination detection using Heavy Ion Backscattering Spectrometry
- Sandia National Labs., Albuquerque, NM (United States)
- SEMATECH, Austin, TX (United States)
Heavy Ion Backscattering Spectrometry (HIBS) is a new ion beam analysis tool using heavy, low-energy ions in backscattering mode which can detect very low levels of surface contamination. By taking advantage of the greatly increased scattering cross-section for such ion beams and eliminating unwanted substrate scattering with a thin carbon foil, our research system has achieved a sensitivity ranging from {approximately}5{times}10{sup 10} atoms/cm{sup 2} for Fe to {approximately}1{times}10{sup 9} atoms/cm{sup 2} for Au on Si, without preconcentration. A stand-alone HIBS prototype now under construction in collaboration with SEMATECH is expected to achieve detection limits of {approximately}5{times}10{sup 9} atoms/cm{sup 2} for Fe and {approximately}1{times}10{sup 8} atoms/cm{sup 2} for Au on Si, again without preconcentration. Since HIBS is standardless and has no matrix effects, it will be useful not only as a standalone tool, but also for benchmarking standards for other tools. This conference is testimony to the importance of controlling contamination in microelectronics manufacturing. By the turn of the century, very large scale integrated circuit processing is expected to require contamination levels well below 1{times}10{sup 9} atoms/cm{sup 2} in both starting materials and introduced by processing. One of the most sensitive of existing general-purpose tools is Total reflection X-Ray Fluorescence (TXRF), which can detect {approximately}1{times}10{sup 10} atoms/cm{sup 2} levels of some elements such as Fe and Cu, but for many elements it is limited to 1{times}10{sup 12} atoms/cm{sup 2} or worse. TXRF can achieve a sensitivity of 10{sup 8} atoms/cm{sup 2} through the use of synchrotron radiation or via pre-concentration using Vapor Phase Decomposition. HIBS provides an ion beam analysis capability with the potential for providing similar sensitivity at medium Z and higher sensitivity at larger Z, all without pre-concentration or matrix effects.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10161606
- Report Number(s):
- SAND-94-1619C; CONF-9410132-1; ON: DE94014182; BR: GB0103012; TRN: 94:015430
- Resource Relation:
- Conference: Microcontamination `94,San Jose, CA (United States),5-6 Oct 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
47 OTHER INSTRUMENTATION
HEAVY ION SPECTROMETERS
DESIGN
SURFACE CONTAMINATION
ION SPECTROSCOPY
SILICON
BACKSCATTERING
CROSS SECTIONS
TIME-OF-FLIGHT MASS SPECTROMETERS
NICKEL
665100
440800
NUCLEAR TECHNIQUES IN CONDENSED MATTER PHYSICS
MISCELLANEOUS INSTRUMENTATION