Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures
Abstract
Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.
- Authors:
-
- Centre National d`Etudes des Telecommunications (CNET), 38 - Meylan (France)
- Sandia National Labs., Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 10161489
- Report Number(s):
- SAND-94-1429C; CONF-931108-103
ON: DE94014180; BR: GB0103012
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; MOSFET; ANNEALING; 426000; COMPONENTS, ELECTRON DEVICES AND CIRCUITS
Citation Formats
Devine, R A.B., Mathiot, D, Warren, W L, and Fleetwood, D M. Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures. United States: N. p., 1993.
Web.
Devine, R A.B., Mathiot, D, Warren, W L, & Fleetwood, D M. Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures. United States.
Devine, R A.B., Mathiot, D, Warren, W L, and Fleetwood, D M. 1993.
"Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures". United States. https://www.osti.gov/servlets/purl/10161489.
@article{osti_10161489,
title = {Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures},
author = {Devine, R A.B. and Mathiot, D and Warren, W L and Fleetwood, D M},
abstractNote = {Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.},
doi = {},
url = {https://www.osti.gov/biblio/10161489},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Dec 31 00:00:00 EST 1993},
month = {Fri Dec 31 00:00:00 EST 1993}
}