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Title: Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures

Abstract

Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.

Authors:
;  [1]; ;  [2]
  1. Centre National d`Etudes des Telecommunications (CNET), 38 - Meylan (France)
  2. Sandia National Labs., Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10161489
Report Number(s):
SAND-94-1429C; CONF-931108-103
ON: DE94014180; BR: GB0103012
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: [1993]
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; MOSFET; ANNEALING; 426000; COMPONENTS, ELECTRON DEVICES AND CIRCUITS

Citation Formats

Devine, R A.B., Mathiot, D, Warren, W L, and Fleetwood, D M. Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures. United States: N. p., 1993. Web.
Devine, R A.B., Mathiot, D, Warren, W L, & Fleetwood, D M. Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures. United States.
Devine, R A.B., Mathiot, D, Warren, W L, and Fleetwood, D M. 1993. "Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures". United States. https://www.osti.gov/servlets/purl/10161489.
@article{osti_10161489,
title = {Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures},
author = {Devine, R A.B. and Mathiot, D and Warren, W L and Fleetwood, D M},
abstractNote = {Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.},
doi = {},
url = {https://www.osti.gov/biblio/10161489}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Dec 31 00:00:00 EST 1993},
month = {Fri Dec 31 00:00:00 EST 1993}
}

Conference:
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