Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors
Conference
·
OSTI ID:10160548
- Brookhaven National Lab., Upton, NY (United States)
- AN SSSR, St. Petersburg (Russian Federation). Physico-Technical Inst.
- Istituto Nazionale di Fisica Nucleare, Milan (Italy)
- Pennsylvania State Univ., University Park, PA (United States). Center for Electronic Materials and Processing
- Naval Research Lab., Washington, DC (United States)
Distributions of the A-center (oxygen-vacancy) in neutron silicon detectors have been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon water depth for medium resistivity (0.1 {minus} 0.2 k{Omega}-cm) silicon detectors. A positive filling pulse was needed to detect the A-centers in high resistivity (>4 k{Omega}-cm) silicon detectors, and this effect was found to be dependent on the oxidation temperature. A discussion of this effect is presented. 16 refs.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10160548
- Report Number(s):
- BNL-47550; CONF-920716-5; ON: DE92016952
- Resource Relation:
- Conference: Nuclear and space radiation effects conference,New Orleans, LA (United States),13-17 Jul 1992; Other Information: PBD: Feb 1992
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors
Elevated temperature annealing of the neutron induced leakage current and corresponding defect levels in low and high resistivity silicon detectors
Investigation on the long-term radiation hardness of low resistivity starting silicon materials for RT silicon detectors in high energy physics
Conference
·
Sat Feb 01 00:00:00 EST 1992
·
OSTI ID:10160548
+6 more
Elevated temperature annealing of the neutron induced leakage current and corresponding defect levels in low and high resistivity silicon detectors
Conference
·
Tue Mar 01 00:00:00 EST 1994
·
OSTI ID:10160548
+2 more
Investigation on the long-term radiation hardness of low resistivity starting silicon materials for RT silicon detectors in high energy physics
Conference
·
Tue Feb 01 00:00:00 EST 1994
·
OSTI ID:10160548
Related Subjects
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
SI SEMICONDUCTOR DETECTORS
DAMAGING NEUTRON FLUENCE
SILICON OXIDES
A CENTERS
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
440200
440104
360202
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
HIGH ENERGY PHYSICS INSTRUMENTATION
STRUCTURE AND PHASE STUDIES
36 MATERIALS SCIENCE
SI SEMICONDUCTOR DETECTORS
DAMAGING NEUTRON FLUENCE
SILICON OXIDES
A CENTERS
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
440200
440104
360202
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
HIGH ENERGY PHYSICS INSTRUMENTATION
STRUCTURE AND PHASE STUDIES