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Title: Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

Conference ·
OSTI ID:10160548
;  [1]; ; ;  [2]; ;  [3]; ;  [4]; ;  [5]
  1. Brookhaven National Lab., Upton, NY (United States)
  2. AN SSSR, St. Petersburg (Russian Federation). Physico-Technical Inst.
  3. Istituto Nazionale di Fisica Nucleare, Milan (Italy)
  4. Pennsylvania State Univ., University Park, PA (United States). Center for Electronic Materials and Processing
  5. Naval Research Lab., Washington, DC (United States)

Distributions of the A-center (oxygen-vacancy) in neutron silicon detectors have been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon water depth for medium resistivity (0.1 {minus} 0.2 k{Omega}-cm) silicon detectors. A positive filling pulse was needed to detect the A-centers in high resistivity (>4 k{Omega}-cm) silicon detectors, and this effect was found to be dependent on the oxidation temperature. A discussion of this effect is presented. 16 refs.

Research Organization:
Brookhaven National Lab., Upton, NY (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC02-76CH00016
OSTI ID:
10160548
Report Number(s):
BNL-47550; CONF-920716-5; ON: DE92016952
Resource Relation:
Conference: Nuclear and space radiation effects conference,New Orleans, LA (United States),13-17 Jul 1992; Other Information: PBD: Feb 1992
Country of Publication:
United States
Language:
English