Flux pinning defects induced by electron irradiation in Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals

Giapintzakis, J; Lee, W C; Rice, J P; Ginsberg, D M; Robertson, I M; Kirk, M A; Wheeler, R

Title: Flux pinning defects induced by electron irradiation in Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals

Full Record
Other Related Research

Abstract

Single crystals of R{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}}, (R=Y, Eu and Gd), have been irradiated with 0.4--1.0 MeV electrons in directions near the c-axis. An incident threshold electron energy for producing flux pinning defects has been found. In-situ TEM studies found no visible defects induced by electron irradiation. This means that point defects or small clusters ({le} 20 {Angstrom}) are responsible for the extra pinning. A consistent interpretation of the data suggests that the most likely pinning defect is the displacement of a Cu atom from the CuO{sub 2} planes.

Authors:

Giapintzakis, J; Lee, W C; Rice, J P; Ginsberg, D M; Robertson, I M ^[1]; Kirk, M A; Wheeler, R ^[2]

Illinois Univ., Urbana, IL (United States)
Argonne National Lab., IL (United States)

Publication Date:: Mon Jun 01 00:00:00 EDT 1992

Research Org.:: Argonne National Lab., IL (United States)

Sponsoring Org.:: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)

OSTI Identifier:: 10159048

Report Number(s):: ANL/CP-76499; CONF-920402-40
ON: DE92016773; CNN: Grant DMR89-20538; Grant DMR88-09854; Grant DMR90-17371

DOE Contract Number:: W-31109-ENG-38

Resource Type:: Conference

Resource Relation:: Conference: 1992 Material Research Society (MRS) spring meeting,San Francisco, CA (United States),27 Apr - 2 May 1992; Other Information: PBD: Jun 1992

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; COPPER OXIDES; PHYSICAL RADIATION EFFECTS; BARIUM OXIDES; YTTRIUM OXIDES; HIGH-TC SUPERCONDUCTORS; MAGNETIC FLUX; EUROPIUM OXIDES; GADOLINIUM OXIDES; IRRADIATION; ANNEALING; MAGNETIC MOMENTS; CRYSTAL DEFECTS; ELECTRONS; 360206; 360202; RADIATION EFFECTS; STRUCTURE AND PHASE STUDIES

Citation Formats


                    Giapintzakis, J, Lee, W C, Rice, J P, Ginsberg, D M, Robertson, I M, Kirk, M A, and Wheeler, R. Flux pinning defects induced by electron irradiation in Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals.  United States: N. p., 1992. 
        Web.

Copy to clipboard


                    Giapintzakis, J, Lee, W C, Rice, J P, Ginsberg, D M, Robertson, I M, Kirk, M A, & Wheeler, R. Flux pinning defects induced by electron irradiation in Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals.  United States.

Copy to clipboard


                    Giapintzakis, J, Lee, W C, Rice, J P, Ginsberg, D M, Robertson, I M, Kirk, M A, and Wheeler, R. 1992.  
        "Flux pinning defects induced by electron irradiation in Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals".  United States.  https://www.osti.gov/servlets/purl/10159048.

Copy to clipboard


                    
@article{osti_10159048,

  title        = {Flux pinning defects induced by electron irradiation in Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} single crystals},

  author       = {Giapintzakis, J and Lee, W C and Rice, J P and Ginsberg, D M and Robertson, I M and Kirk, M A and Wheeler, R},

  abstractNote = {Single crystals of R{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}}, (R=Y, Eu and Gd), have been irradiated with 0.4--1.0 MeV electrons in directions near the c-axis. An incident threshold electron energy for producing flux pinning defects has been found. In-situ TEM studies found no visible defects induced by electron irradiation. This means that point defects or small clusters ({le} 20 {Angstrom}) are responsible for the extra pinning. A consistent interpretation of the data suggests that the most likely pinning defect is the displacement of a Cu atom from the CuO{sub 2} planes.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/10159048},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Mon Jun 01 00:00:00 EDT 1992},

  month        = {Mon Jun 01 00:00:00 EDT 1992}

}

Copy to clipboard

Conference:

View Conference (0.60 MB)

Other availability

Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Flux pinning defects induced by electron irradiation in Y sub 1 Ba sub 2 Cu sub 3 O sub 7-. delta. single crystals

Conference Giapintzakis, J; Lee, W; Rice, J; ...

Single crystals of R{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}}, (R=Y, Eu and Gd), have been irradiated with 0.4--1.0 MeV electrons in directions near the c-axis. An incident threshold electron energy for producing flux pinning defects has been found. In-situ TEM studies found no visible defects induced by electron irradiation. This means that point defects or small clusters ({le} 20 {Angstrom}) are responsible for the extra pinning. A consistent interpretation of the data suggests that the most likely pinning defect is the displacement of a Cu atom from the CuO{sub 2} planes.
Full Text Available
Theoretical modeling and experimental characterization of planar defects in Y sub 2 Ba sub 4 Cu sub 6+x O sub 14+x

Conference Burmester, C; Fendorf, M; Gronsky, R; ...

Crystallographic defects and phase transformations in the system Y{sub 2}Ba{sub 4}Cu{sub 6 + x}O{sub 14 + x}(0{le}{times}{le}4) are investigated by high resolution transmission electron microscopy (TEM) and static lattice, three dimensional Monte Carlo computer simulations. High resolution images of partially transformed (x = 2 to x = 1) material reveal a prevalence of CuO planar defects (stacking faults) associated with the transformation and an absence of disturbance to the perovskite Ba-Y-Ba blocks. An atomic mechanism involving the intercalculation and removal of extra CuO planes by partial dislocation climb, and requiring only a-b plane diffusion, is developed for the formation ofmore »« less
Full Text Available
Enhancement of flux pinning by Pr doping in Y[sub 1[minus][ital x]]Pr[sub [ital x]]Ba[sub 2]Cu[sub 3]O[sub 7[minus][delta]] (0[le][ital x][le]0. 4)

Journal Article Paulius, L; Almasan, C; Maple, M - Physical Review, B: Condensed Matter; (United States)

Magnetic relaxation measurements in a magnetic field of 5 kOe at temperatures 5 K [le][ital T][le]90 K have been made on the system Y[sub 1[minus][ital x]]Pr[sub [ital x]]Ba[sub 2]Cu[sub 3]O[sub 7[minus][delta]] for 0[le][ital x][le]0.4. The measurements reveal two peaks in the normalized logarithmic decay of the magnetization [ital S] as a function of temperature for the full range of Pr concentrations studied. The occurrence of the second peak in [ital S] could be a reflection of the softening of the flux lattice on approaching the melting line. Both the pinning energy at 27 K and the intragranular critical current densitymore »« less
https://doi.org/10.1103/PhysRevB.47.11627
Production and identification of flux-pinning defects by electron irradiation in YBa sub 2 Cu sub 3 O sub 7 minus x single crystals

Journal Article Giapintzakis, J; Lee, W; Rice, J; ... - Physical Review, B: Condensed Matter; (United States)

An enhancement in {ital J}{sub {ital c}} of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} single crystals in a magnetic field is observed after irradiation with 1-MeV electrons. Typically, a factor-of-2 increase in {ital J}{sub {ital c}} is deduced from magnetic hysteresis loops at 10 K and 1 T with {bold H}{parallel}{ital c}. This enhancement is about 1/2 of that produced by proton and neutron irradiations under similar measurement conditions. {ital In} {ital situ} transmission-electron-microscopy studies found no visible defects induced by electron irradiation, which means that point defects or small clusters (of size {lt}2 nm) are responsible for the extra pinning.more »« less
https://doi.org/10.1103/PhysRevB.45.10677
Flux pinning by collective stacking faults in Y{sub 0.6}Ho{sub 0.4}Ba{sub 2}Cu{sub 3}O{sub y} prepared by powder melting process

Journal Article Feng, Y; Wen, J; Koshizuka, N; ... - Applied Physics Letters

The correlation between microstructure and flux pinning of Y{sub 0.6}Ho{sub 0.4}Ba{sub 2}Cu{sub 3}O{sub y} (123) sample prepared by the powder melting process method has been investigated. Transmission electron microscopy observations show that there exists a large number of novel stacking faults (double CuO chains) in this sample. The shape of the stacking faults looks like collective stairs. The stacking faults are different from those observed in the conventional melt textured 123 materials and not related to 123/Y{sub 2}BaCuO{sub 5} interface. The sample is resintered at 900{degree}C purposefully in order to reduce the density of stacking faults. The magnetization measurements indicatemore »« less
https://doi.org/10.1063/1.119045

Similar Records