A photoemission study of Au, Ge, and O{sub 2} deposition on NH{sub 4}F etched Si(111)
We have studied the interaction of a metal, Au, a semiconductor, Ge, and a non-metal, O{sub 2}, with the NH{sub 4}F etched Si(111) surface with photoemission spectroscopy. Two components were present in Si 2p core level spectra from the H-terminated surface. We observed the flat band condition from the as-etched, n-type, Si(111) surface. We performed stepwise depositions of Au and measured the band bending with photoemission spectroscopy. The Fermi level pinned near mid-gap as Au was deposited onto the as-etched surface. After the deposition of 1 ML of Au, a Au-silicide layer formed. This interfacial component indicated that the passivating H layer was compromised. As the Au coverage was increased, layers of pure Au formed between the bulk silicon and the Au-silicide layer. The observed behavior was nearly identical to that of Au deposition on the Si(111) 7 {times} 7 surface. Next, we tested the ability of the monohydride layer to sustain surfactant assisted growth of Ge. Ge islanding was observed at 400{degree}C indicating that good surfactant growth was not obtained. Although the monohydride layer was not a good surfactant for the Si(111) surface at this temperature, further study at different temperatures is needed to determine the ability of the ideal monohydride layer to act as a surfactant. Finally, we observed no oxidation of the as-etched surface at room temperature upon exposure to molecular oxygen.
- Research Organization:
- Stanford Linear Accelerator Center, Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00515
- OSTI ID:
- 10157583
- Report Number(s):
- SLAC-PUB-6466; SLAC/SSRL-0072; CONF-9311104-22; ON: DE94013352; TRN: 94:011151
- Resource Relation:
- Conference: 40. national symposium of the American Vacuum Society (AVS),Orlando, FL (United States),15-19 Nov 1993; Other Information: PBD: Mar 1994
- Country of Publication:
- United States
- Language:
- English
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