Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films
- Houston Univ., TX (United States)
- Massachusetts Inst. of Tech., Cambridge, MA (United States)
- Los Alamos National Lab., NM (United States)
Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.
- Research Organization:
- Los Alamos National Lab., NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Texas State Government, Austin, TX (United States); Welch (Robert A.) Foundation, Houston, TX (United States); Sloan (Alfred P.) Foundation, New York, NY (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 10157046
- Report Number(s):
- LA-UR-94-1733; CONF-940411-24; ON: DE94013115
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS),San Francisco, CA (United States),4-8 Apr 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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