Uniaxially stressed Ge:Ga and Ge:Be
- Univ. of California, Berkeley, CA (United States)
The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE; National Aeronautics and Space Administration (NASA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10140490
- Report Number(s):
- LBL-33454; ON: DE93010426; CNN: Contract W-17,605
- Resource Relation:
- Other Information: TH: Thesis (M.S.); PBD: Dec 1992
- Country of Publication:
- United States
- Language:
- English
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