X-ray absorption study of pulsed laser deposited boron nitride films

Conference · Wed Feb 02 00:00:00 EST 1994

OSTI ID:10133562

Chaiken, A; Terminello, L J; Wong, J ^[1]; Doll, G L ^[2]; Sato, T ^[3]

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1. Lawrence Livermore National Lab., CA (United States)
2. General Motors Corp., Warren, MI (United States). Research and Development Lab.
3. National Inst. for Researches in Inorganic Materials, Tsukuba, Ibaraki (Japan)

B and N K-edge x-ray absorption spectroscopy measurements have been performed on three BN thin films grown on Si substrates using ion- assisted pulsed laser deposition. Comparison of the films` spectra to those of several single-phase BN powder standards shows that the films consist primarily of sp{sup 2} bonds. Other features in the films`s spectra suggest the presence of secondary phases, possibly cubic or rhombohedral BN. Films grown at higher deposition rates and higher ion-beam voltages are found to be more disordered, in agreement with previous work.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 10133562
• Report Number(s): UCRL-JC-114133; CONF-931108-91; ON: DE94008295
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: 2 Feb 1994
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON NITRIDES
DEPOSITION
THIN FILMS
ABSORPTION SPECTRA
X-RAY SPECTRA
360201
PREPARATION AND FABRICATION