Fundamental studies of the chemical vapor deposition of diamond. Progress report, April 1, 1990--July 31, 1991
Abstract
The plasma or thermally enhanced low pressure chemical vapor deposition of diamond films is an exciting development with many challenging fundamental problems. The early stages of nucleation is relevant to the initial growth rate and the perfection and morphology of the deposit. To isolate one of the factors that influence nucleation, we have studied the effect of surface topography on the nucleation process. Our earlier work has shown preferential nucleation on sharp convex features and we have proposed several possible reasons for this behavior, including dangling bonds at the convex features. In our recent work, we have extended our investigation to include a novel patterning of silicon substrates used to pattern silicon solar cells. The results are consistent with our earlier observations that the majority of nucleation events occur on protruding surface features. In an effort to establish whether dangling bonds at the protruding surfaces may be responsible for the selective nucleation, we have evaluated the dangling bond concentration using electron spin resonance. We have carried out deposition under nominally identical surface topography, but with different concentrations of dangling bonds at or near the surface. The results of this study indicate that dangling bonds play a minor role in enhancingmore »
- Authors:
- Publication Date:
- Research Org.:
- Stanford Univ., CA (United States). Dept. of Materials Science and Engineering
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 10133078
- Report Number(s):
- DOE/ER/45345-T1
ON: DE92010327
- DOE Contract Number:
- FG05-88ER45345
- Resource Type:
- Technical Report
- Resource Relation:
- Other Information: PBD: [1991]
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; DIAMONDS; CHEMICAL VAPOR DEPOSITION; PROGRESS REPORT; NUCLEATION; SILICON; SUBSTRATES; CHEMICAL BONDS; MORPHOLOGY; FILMS; 360601; 360602; PREPARATION AND MANUFACTURE; STRUCTURE AND PHASE STUDIES
Citation Formats
Stevenson, D A. Fundamental studies of the chemical vapor deposition of diamond. Progress report, April 1, 1990--July 31, 1991. United States: N. p., 1991.
Web. doi:10.2172/10133078.
Stevenson, D A. Fundamental studies of the chemical vapor deposition of diamond. Progress report, April 1, 1990--July 31, 1991. United States. https://doi.org/10.2172/10133078
Stevenson, D A. 1991.
"Fundamental studies of the chemical vapor deposition of diamond. Progress report, April 1, 1990--July 31, 1991". United States. https://doi.org/10.2172/10133078. https://www.osti.gov/servlets/purl/10133078.
@article{osti_10133078,
title = {Fundamental studies of the chemical vapor deposition of diamond. Progress report, April 1, 1990--July 31, 1991},
author = {Stevenson, D A},
abstractNote = {The plasma or thermally enhanced low pressure chemical vapor deposition of diamond films is an exciting development with many challenging fundamental problems. The early stages of nucleation is relevant to the initial growth rate and the perfection and morphology of the deposit. To isolate one of the factors that influence nucleation, we have studied the effect of surface topography on the nucleation process. Our earlier work has shown preferential nucleation on sharp convex features and we have proposed several possible reasons for this behavior, including dangling bonds at the convex features. In our recent work, we have extended our investigation to include a novel patterning of silicon substrates used to pattern silicon solar cells. The results are consistent with our earlier observations that the majority of nucleation events occur on protruding surface features. In an effort to establish whether dangling bonds at the protruding surfaces may be responsible for the selective nucleation, we have evaluated the dangling bond concentration using electron spin resonance. We have carried out deposition under nominally identical surface topography, but with different concentrations of dangling bonds at or near the surface. The results of this study indicate that dangling bonds play a minor role in enhancing nucleation, in contrast to a substantial role played by special surface topographical features. In the course of the past year, we have submitted four manuscripts for publication and have made six presentations.},
doi = {10.2172/10133078},
url = {https://www.osti.gov/biblio/10133078},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1991},
month = {Tue Dec 31 00:00:00 EST 1991}
}