Bounding the total-dose response of modern bipolar transistors

Conference · Tue Mar 01 00:00:00 EST 1994

OSTI ID:10130954

Kosier, S L; Wei, A; Schrimpf, R D ^[1]; Combs, W E ^[2]; Fleetwood, D M ^[3]; DeLaus, M ^[4]; Pease, R L ^[5]

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1. Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering
2. Naval Surface Warfare Center-Crane, Crane, IN (United States)
3. Sandia National Labs., Albuquerque, NM (United States)
4. Analog Devices, Inc., Wilmington, MA (United States)
5. RLP Research, Albuquerque, NM (United States)

The base current in modern bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10130954
• Report Number(s): SAND-94-0458C; CONF-940726-5; ON: DE94007742; BR: GB0103012
• Resource Relation: Conference: 31. annual international nuclear and space radiation effects conference,Tucson, AZ (United States),18-22 Jul 1994; Other Information: PBD: [1994]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
IONIZING RADIATIONS
ELECTRIC CURRENTS
GAIN
SILICON OXIDES
426000
360605
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
RADIATION EFFECTS