Bonded semiconductor substrate

Atwater, Jr; James, M

Title: Bonded semiconductor substrate

Patent · Tue Jul 13 00:00:00 EDT 2010

OSTI ID:1013001

Atwater, Jr; James, M ^[1]

Pasadena, CA

Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

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Research Organization:: California Institute of Technology (CalTech), Pasadena, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-99GO10337

Assignee:: California Institute of Technology (Pasadena, CA)

Patent Number(s):: 7,755,109

Application Number:: 11/430,160

OSTI ID:: 1013001

Country of Publication:: United States

Language:: English

References (30)

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