BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES
This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.
- Research Organization:
- Integrated Micro Sensors, Inc.
- Sponsoring Organization:
- USDOE Assistant Secretary for Energy Efficiency and Renewable Energy (EE)
- DOE Contract Number:
- FG02-05ER84325
- OSTI ID:
- 1012989
- Report Number(s):
- DOE/05ER84325-Final Report; TRN: US201111%%397
- Country of Publication:
- United States
- Language:
- English
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