Fundamental studies of defect generation in amorphous silicon alloys grown by remote plasma-enhanced chemical-vapor deposition (Remote PECVD). Annual subcontract report, 1 September 1990--31 August 1991

Technical Report · Fri Jan 01 00:00:00 EST 1993

DOI:https://doi.org/10.2172/10129188· OSTI ID:10129188

Lucovsky, G; Nemanich, R J; Bernholc, J; Whitten, J; Wang, C; Davidson, B; Williams, M; Lee, D; Bjorkman, C; Jing, Z ^[1]

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1. North Carolina State Univ., Raleigh, NC (United States)

We demonstrated that the remote PECVD process can be used to deposit heavily doped n-type and p-type a-Si:H thin films. We optimized conditions for depositing undoped, near-intrinsic and heavily doped thin films of {mu}c(microcrystalline)-Si by remote PECVD. We extended the remote PECVD process to the deposition of undoped and doped a-Si,C:H and {mu}c-Si,C alloy films. We analyzed transport data for the dark conductivity in undoped and doped a-Si:H, a-Si,C:H, {mu}c-Si and {mu}c-Si,C films. We studied the properties of doped a-Si:H and {mu}c-Si in MOS capacitors using {approximately}10 {Omega}-cm p-type crystalline substrates and thermally grown Si0{sub 2} dielectric layers. We collaborated with a group at RWTH in Aachen, Germany, and studied the contributions of process induced defect states to the recombination of photogenerated electron pairs. We applied a tight-binding model to Si-Bethe lattice structures to investigate the effects of bond angle, and dihedral angle disorder. We used ab initio and empirical calculations to study non-random bonding arrangements in a-Si,O:H and doped a-Si:H films.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States); North Carolina State Univ., Raleigh, NC (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 10129188
• Report Number(s): NREL/TP-451-4852; ON: DE92010560
• Resource Relation: Other Information: PBD: Jan 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
SILICON
CHEMICAL VAPOR DEPOSITION
PROGRESS REPORT
PLASMA
DOPED MATERIALS
AMORPHOUS STATE
THIN FILMS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
HYDROGEN ADDITIONS
CARBON ADDITIONS
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
BORON ADDITIONS
MOS SOLAR CELLS
CAPACITORS
MOLECULAR STRUCTURE
360601
140501
PREPARATION AND MANUFACTURE
PHOTOVOLTAIC CONVERSION